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http://acervodigital.unesp.br/handle/11449/37896Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | DeLima, J. A. | - |
| dc.date.accessioned | 2014-05-20T15:27:59Z | - |
| dc.date.accessioned | 2016-10-25T18:02:58Z | - |
| dc.date.available | 2014-05-20T15:27:59Z | - |
| dc.date.available | 2016-10-25T18:02:58Z | - |
| dc.date.issued | 1996-10-01 | - |
| dc.identifier | http://dx.doi.org/10.1016/0038-1101(96)00043-3 | - |
| dc.identifier.citation | Solid-state Electronics. Oxford: Pergamon-Elsevier B.V., v. 39, n. 10, p. 1524-1525, 1996. | - |
| dc.identifier.issn | 0038-1101 | - |
| dc.identifier.uri | http://hdl.handle.net/11449/37896 | - |
| dc.identifier.uri | http://acervodigital.unesp.br/handle/11449/37896 | - |
| dc.format.extent | 1524-1525 | - |
| dc.language.iso | eng | - |
| dc.publisher | Elsevier B.V. | - |
| dc.source | Web of Science | - |
| dc.title | Effective aspect-ratio and gate-capacitance in circular geometry MOS transistors | en |
| dc.type | outro | - |
| dc.contributor.institution | Universidade Estadual Paulista (UNESP) | - |
| dc.description.affiliation | UNIV ESTADUAL PAULISTA,DEPT ELECT ENGN,BR-12500000 GUARATINGUETA,SP,BRAZIL | - |
| dc.description.affiliationUnesp | UNIV ESTADUAL PAULISTA,DEPT ELECT ENGN,BR-12500000 GUARATINGUETA,SP,BRAZIL | - |
| dc.identifier.doi | 10.1016/0038-1101(96)00043-3 | - |
| dc.identifier.wos | WOS:A1996VJ86600019 | - |
| dc.rights.accessRights | Acesso restrito | - |
| dc.relation.ispartof | Solid-state Electronics | - |
| Appears in Collections: | Artigos, TCCs, Teses e Dissertações da Unesp | |
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