Você está no menu de acessibilidade

Utilize este identificador para citar ou criar um link para este item: http://acervodigital.unesp.br/handle/11449/39345
Registro de metadados completo
Campo DCValorIdioma
dc.contributor.authorVasconcelos, J. S.-
dc.contributor.authorVasconcelos, N. S. L. S.-
dc.contributor.authorOrlandi, Marcelo Ornaghi-
dc.contributor.authorBueno, Paulo Roberto-
dc.contributor.authorVarela, José Arana-
dc.contributor.authorLongo, Elson-
dc.contributor.authorBarrado, C. M.-
dc.contributor.authorLeite, E. R.-
dc.date.accessioned2014-05-20T15:29:52Z-
dc.date.accessioned2016-10-25T18:05:10Z-
dc.date.available2014-05-20T15:29:52Z-
dc.date.available2016-10-25T18:05:10Z-
dc.date.issued2006-10-09-
dc.identifierhttp://dx.doi.org/10.1063/1.2354483-
dc.identifier.citationApplied Physics Letters. Melville: Amer Inst Physics, v. 89, n. 15, 3 p., 2006.-
dc.identifier.issn0003-6951-
dc.identifier.urihttp://hdl.handle.net/11449/39345-
dc.identifier.urihttp://acervodigital.unesp.br/handle/11449/39345-
dc.description.abstractIn the present work, electroactive grain boundaries of highly dense metal oxide SnO2-based polycrystalline varistors were determined by electrostatic force microscopy (EFM). The EFM technique was applied to identify electroactive grain boundaries and thus estimate the amount of active grain boundary, which, in the metal oxide SnO2-based varistor, was calculated at around 85%, i.e., much higher than that found in traditional metal oxide ZnO-based varistors. The mean potential barrier height value obtained from the EFM analysis was in complete agreement with the values calculated from the C-V measurements, together with a complex capacitance plane analysis that validates the methodology proposed here. (c) 2006 American Institute of Physics.en
dc.format.extent3-
dc.language.isoeng-
dc.publisherAmerican Institute of Physics (AIP)-
dc.sourceWeb of Science-
dc.titleElectrostatic force microscopy as a tool to estimate the number of active potential barriers in dense non-Ohmic polycrystalline SnO2 devicesen
dc.typeoutro-
dc.contributor.institutionCentro Federal de Educação Tecnológica (CEFET)-
dc.contributor.institutionUniversidade Estadual Paulista (UNESP)-
dc.contributor.institutionUniversidade Federal de São Carlos (UFSCar)-
dc.description.affiliationCEFET, Ctr Fed Educ Tecnol Maranhao, BR-65025001 Maranhao, Brazil-
dc.description.affiliationUniv Estadual Paulista, Dept Quim & Fis, BR-15385000 São Paulo, Brazil-
dc.description.affiliationUniv Estadual Paulista, Inst Quim, BR-14800900 São Paulo, Brazil-
dc.description.affiliationUniv Fed Sao Carlos, Dept Quim, BR-13565905 Sao Carlos, SP, Brazil-
dc.description.affiliationUnespUniv Estadual Paulista, Dept Quim & Fis, BR-15385000 São Paulo, Brazil-
dc.description.affiliationUnespUniv Estadual Paulista, Inst Quim, BR-14800900 São Paulo, Brazil-
dc.identifier.doi10.1063/1.2354483-
dc.identifier.wosWOS:000241247900051-
dc.rights.accessRightsAcesso restrito-
dc.identifier.fileWOS000241247900051.pdf-
dc.relation.ispartofApplied Physics Letters-
Aparece nas coleções:Artigos, TCCs, Teses e Dissertações da Unesp

Não há nenhum arquivo associado com este item.
 

Itens do Acervo digital da UNESP são protegidos por direitos autorais reservados a menos que seja expresso o contrário.